功率三极管

ST

意法半导体

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Complement to type 2SB601 ·DARLINGTON APPLICATIONS ·Low frequency power amplifier ·Low speed switching industrial use

文件：102.61 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.0A ·Low Saturation Voltage ·Complement to Type 2SB601 APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications

文件：141.6 Kbytes 页数：3 Pages

ISC

无锡固电

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices

文件：90.91 Kbytes 页数：6 Pages

NEC

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