Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

Features • Small size package: MPAK (SC–59A) • Large Maximum current: IC = 1 A • Low collector to emitter saturation voltage: VCE(sat) = 0.3 V max.(at IC/IB = 0.5 A/0.05 A) • High power dissipation: PC = 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm)) • Complementary pair with 2S

文件：69.4 Kbytes 页数：6 Pages

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Silicon NPN Epitaxial Planer Low Frequency Power Amplifier

文件：75.25 Kbytes 页数：6 Pages

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TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)

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