NPN TRIPLE DIFFUSED TYPE (SWITHCING APPLICATIONS)

Switching Application High breakdown voltage: VCBO = 100 V : VEBO = 18 V Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) High DC current gain: hFE = 200 (min) (VCE = 5 V, IC

文件：168.03 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification ■ Features ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：36.08 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Epitaxial Planar Type

Features ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：49 Kbytes 页数：1 Pages

KEXIN

科信电子

Power Transistor

Features ● IC = 1A. ● Low saturation voltage.

文件：35.61 Kbytes 页数：1 Pages

KEXIN

科信电子

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

文件：1.64723 Mbytes 页数：7 Pages

ROHM

罗姆

丝印：BSR；Package：SOT-346；Power Transistor (15V, 1A)

Features 1) Low saturation voltage, VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2) IC=1A. 3) Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

文件：69.33 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

文件：1.64723 Mbytes 页数：7 Pages

ROHM

罗姆

Power Transistor (15V,1A)

Features 1)Low saturation voltage, 　 VCE(sat)=0.3V(Max.) at IC/IB=400mA/20mA 2)IC=1A. 3)Complements the 2SB1590K. Application LOW FREQUENCY POWER AMPLIFIER

文件：1.64723 Mbytes 页数：7 Pages

ROHM

罗姆

TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE

Power Amplifier Applications ● High breakdown voltage: VCEO = 160 V (min) ● Complementary to 2SB1594

文件：137.74 Kbytes 页数：2 Pages

TOSHIBA

东芝

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 160V(Min) ·High DC Current Gain-: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) B ·Complement to Type 2SB1594 APPLICATIONS ·Designed for power amplifie

文件：248.73 Kbytes 页数：2 Pages

ISC

无锡固电