NPN TRIPLE DIFFUSED TYPE (SWITHCING APPLICATIONS)

Switching Application High breakdown voltage: VCBO = 100 V : VEBO = 18 V Low saturation voltage: VCE (sat) = 1.2 V (max) (IC = 5 A, IB = 1 A) High speed: tf = 1 µs (typ.) (IC = 5 A, IB = ±0.5 A) High DC current gain: hFE = 200 (min) (VCE = 5 V, IC

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TOSHIBA

东芝

Power transistor for low frequency applications

Polarity：NPN\nRoHS Compatible Product(s) (#)：Available Collector Current IC 6 A \nCollector-emitter voltage VCEO 60 V ;

Toshiba

东芝

模块

CONCEPT

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SOT89

RENESAS

瑞萨

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TO-92NL

UTC/友顺

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