2SD2165中文资料瑞萨数据手册PDF规格书
晶体管资料
- 型号：
- 别名：
2SD2165三极管、2SD2165晶体管、2SD2165晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
HI_BETA
- 封装形式：
直插封装
- 极限工作电压：
100V
- 最大电流允许值：
6A
- 最大工作频率：
110MHZ
- 引脚数：
3
- 可代换的型号：
2SD1407,2SD1474,2SD1594,
- 最大耗散功率：
30W
- 放大倍数：
β>800
- 图片代号：
B-10
- vtest：
100
- htest：
110000000
- atest：
6
- wtest：
30
2SD2165规格书详情
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin-molded insulation package, thus contributing to high-density mounting and mounting cost reduction.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A)
VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)
• Mold package that does not require an insulating board or
insulation bushing
产品属性
- 型号：
2SD2165
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
NPN SILICON EPITAXIAL TRANSISTOR(DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
22+ |
TO126 |
100000 |
代理渠道/只做原装/可含税 |
询价 | |||
ROHM/罗姆 |
2517+ |
TO-126 |
8850 |
只做原装正品现货或订货假一赔十! |
询价 | ||
NEC |
20+ |
TO-220F |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ROHM |
2016+ |
SOT-89 |
11000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
ROHM |
2008+ |
TO-126 |
3970 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ROHM |
24+ |
60000 |
询价 | ||||
NEC |
24+ |
4326 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | |||
RENESAS/瑞萨 |
24+ |
原封装 |
52000 |
只做原装进口现货 |
询价 | ||
ROHM |
2008+ |
TO-126 |
3989 |
询价 | |||
RENESAS/瑞萨 |
24+ |
原封装 |
29823 |
郑重承诺只做原装进口现货 |
询价 |
