2SD1255-Q

NPN Transistors

2SD1255

iscSiliconNPNPowerTransistor

DESCRIPTION •HighCollector-EmitterBreakdownVoltage-:V(BR)CEO=130V(Min) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=0.5V(Max.)@IC=3.0A •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLIC

2SD1255

SiliconPNPepitaxialplanartype(Forpowerswitching)

SiliconPNPepitaxialplanartype ForPowerswitching ■Features •Lowcollector-emittersaturationvoltageVCE(sat) •SatisfactorylinearityofforwardcurrenttransferratiohFE •LargecollectorcurrentIC •Ntypepackageenablingdirectsolderingoftheradiatingfintotheprintedcirc

2SD1255-P

NPNTransistors