NPN Transistors

文件：1.25026 Mbytes 页数：3 Pages

KEXIN

科信电子

isc Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 130V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max.)@ IC= 3.0A • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

文件：260.69 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type(For power switching)

Silicon PNP epitaxial planar type For Power switching ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • N type package enabling direct soldering of the radiating fin to the printed circ

文件：58.06 Kbytes 页数：3 Pages

Panasonic

松下

NPN Transistors

文件：1.25026 Mbytes 页数：3 Pages

KEXIN

科信电子