Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT monitor ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High speed switching: tf 200 ns • Wide safe operation area

文件：67.64 Kbytes 页数：3 Pages

PANASONIC

松下

2SC5932

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：52.85 Kbytes 页数：3 Pages

SANYO

三洋

2SC5933

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1600V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：52.65 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

文件：71.92 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

文件：71.92 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN triple diffusion planar type

Silicon NPN triple diffusion planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio hFE • Dielectric breakdown voltage of the package: 5 kV • Full-pack package which can be installed to the heat sink with on

文件：71.92 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN epitaxial planar type

For high-frequency amplification/oscillation/mixing ■ Features • High transition frequency fT • Small collector output capacitance (Common base, input open circuited) Cob and reverse transfer capacitance (Common base) Crb • SSS-Mini type package, allowing downsizing of the equipment

文件：80.89 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon NPN Triple Diffused Type (PCT Process) High-Speed and High-Voltage Switching Applications

文件：142.31 Kbytes 页数：5 Pages

TOSHIBA

东芝

FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

文件：89.55 Kbytes 页数：4 Pages

ISAHAYA

谏早电子