NPN SILICON SiGe RF TWIN TRANSISTOR

NPN SILICON + SiGe RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN SUPER LEAD-LESS MINIMOLD (1007 PKG) FEATURES • 2 different built-in transistors (2SC5436, NESG2107M33) Q1: High gain transistor fT = 12 GHz TYP., S21e2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Built-in lo

文件：213.31 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5786) Q1: High-gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Low phase di

文件：388.65 Kbytes 页数：30 Pages

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瑞萨

NPN SILICON RF TWIN TRANSISTOR

NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN LEAD-LESS MINIMOLD FEATURES • Low voltage operation • 2 different built-in transistors (2SC5436, 2SC5800) Q1: Built-in high gain transistor fT = 12.0 GHz TYP., ½S21e½2 = 9.0 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz Q2: Bui

文件：387.98 Kbytes 页数：30 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Contains same chip as 2SC5186 • Flat-lead 3-pin thin-type ultra super minimold package

文件：232.85 Kbytes 页数：14 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION

FEATURE • Ultra super mini-mold thin flat package (1.4 mm × 0.8 mm × 0.59 mm: TYP.) • Contains same chip as 2SC5195

文件：63.11 Kbytes 页数：8 Pages

NEC

瑞萨

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTA SWITCHINGM DC-DC CONVERTER, INVERTER LIGHTING APPLICATIONS)

Switching Regulator Applications High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications • Excellent switching times: tr = 0.2 μs (typ.), tf = 0.15 μs (typ.) • High collector breakdown voltage: VCEO = 450 V

文件：158.75 Kbytes 页数：3 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High collector breakdown voltage • Excellent switching times APPLICATIONS • Switching regulator applications • High voltage switching applications • DC-DC converter applications • Inverter lighting applications

文件：178.84 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High collector breakdown voltage • Excellent switching times APPLICATIONS • Switching regulator applications • High voltage switching applications • DC-DC converter applications • Inverter lighting applications

文件：206.83 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High collector breakdown voltage • Excellent switching times APPLICATIONS • Switching regulator applications • High voltage switching applications • DC-DC converter applications • Inverter lighting applications

文件：265.18 Kbytes 页数：4 Pages

SAVANTIC