NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High breakdown voltage : VCEO = 400 V • Low collector-emitter saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)

文件：132.83 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

文件：256.18 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

文件：164.13 Kbytes 页数：4 Pages

UTC

友顺

HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

文件：164 Kbytes 页数：4 Pages

UTC

友顺

HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

文件：164.13 Kbytes 页数：4 Pages

UTC

友顺

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications

ONSEMI

安森美半导体

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications

ONSEMI

安森美半导体

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

ONSEMI

安森美半导体