Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：145.45 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.0 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：24.51 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：24.75 Kbytes 页数：5 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：169.44 Kbytes 页数：6 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 14.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：169.44 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN EPITAXIAL TYPE (AUDIO POWER, DRIVER STAGE AMPLIFIER APPLICATIONS)

AUDIO POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • Complementary to 2SA1899

文件：88.66 Kbytes 页数：1 Pages

TOSHIBA

东芝

丝印：CGR；Package：SOT-89；Medium power transistor (50V, 1A)

Medium power transistor (50V, 1A) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900

文件：64.81 Kbytes 页数：3 Pages

ROHM

罗姆

Medium Power Transistor

Medium Power Transistor Features Low saturation voltage, typically VCE(sat)= 0.12V at IC/ IB= 500mA / 50mA. PC=2W (on 40×40×0.7mm ceramic board).

文件：50.27 Kbytes 页数：1 Pages

KEXIN

科信电子

Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA

Medium power transistor (50V, 1A) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900

文件：84.03 Kbytes 页数：3 Pages

ROHM

罗姆

Medium power transistor (50V, 1A)

Medium power transistor (50V, 1A) Features 1) Low saturation voltage, typically VCE(sat) = 0.12V at IC / IB = 500mA / 50mA 2) PC=2W (on 40×40×0.7mm ceramic board) 3) Complements the 2SA1900

文件：84.03 Kbytes 页数：3 Pages

ROHM

罗姆