Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

■ Features ● High collector to base voltage VCBO ● High collector to emitter VCEO ● Allowing automatic insertion with radial taping

文件：40.11 Kbytes 页数：2 Pages

PANASONIC

松下

High-Speed Switching Applications

High-Speed Switching Applications Features • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacitance. • Very small-sized package permitting 2SC4987-applied sets to be made small and slim.

文件：90.56 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：88.87 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：47.27 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

High Gain Bandwidth Product

DESCRIPTION • High Gain Bandwidth Product fT = 8.5 GHz TYP. • High Gain, Low Noise Figure PG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz APPLICATIONS • Designed for use in VHF ~ UHF wide band amplifier.

文件：216.78 Kbytes 页数：5 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 8.5 GHz Typ • High gain, low noise figure PG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：88.87 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Bipolar Transistor

Features • High gain bandwidth product fT= 9.5 GHz typ • High gain, low noise figure PG = 15.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Application VHF & UHF wide band amplifire

文件：43.58 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 10.5 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.2 dB Typ at f = 900 MHz

文件：65.58 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：65.43 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Features • High gain bandwidth product fT = 11 GHz Typ • High gain, low noise figure PG = 16.5 dB Typ, NF = 1.1 dB Typ at f = 900 MHz Application VHF / UHF wide band amplifier

文件：65.95 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司