Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching ■ Features • High-speed switching • High collector-base voltage (Emitter open) VCBO • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which ca

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Panasonic

松下

Silicon NPN Triple Diffused Planar Type

[Panasonic] Silicon NPN Triple-Diffused Planar Type High Breakdwon Voltage, High Speed Switching ■ Features ● High speed switching ● High collector-base voltage (VCBO) ● Wide area of safety operation (ASO) ● Good linearity of DC current gain (hFE) ● Full Pack package for simplified mountin

文件：65.56 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications.

文件：127.45 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Base Breakdown Voltage- : V(BR)CBO= 500V(Min.) • Wide Area of Safe Operation • High Speed Switching APPLICATIONS • Designed for high speed switching applications.

文件：246.01 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Epitaxial

Application VHF / UHF wide band amplifier

文件：48.38 Kbytes 页数：10 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon NPN Power Transistors

DESCRIPTION • With TO-3PML package • High breakdown voltage, high reliability. • Fast switching speed • Wide area of safe operation APPLICATIONS • For switching regulator applications

文件：222.43 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications.

文件：134.71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) • High Switching Speed • Wide Area of Safe Operation APPLICATIONS • Designed for switching regulator and general purpose applications.

文件：156.98 Kbytes 页数：4 Pages

ISC

无锡固电

400V/12A Switching Regulator Applications

400V/12A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

文件：96.94 Kbytes 页数：4 Pages

SANYO

三洋

Switching Regulator Applications

400V/16A Switching Regulator Applications Features • High breakdown voltage, high reliability. • Fast switching speed (tf : 0.1µs typ). • Wide ASO. • Adoption of MBIT process. • Micaless package facilitating easy mounting.

文件：99.1 Kbytes 页数：3 Pages

SANYO

三洋