NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low saturation voltage: VCE (sat)= 0.5 V (max) (IC= 1 A) • High collector power dissipation: PC= 900 mW • High-speed switching: tstg= 500 ns (typ.) • Complementary to 2SA1680

文件：166.3 Kbytes 页数：2 Pages

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NPN EPITAXIAL TYPE (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power switching applications • Low collector saturation voltage: VCE (sat) = 0.5V (max) (at IC = 1A) • High speed switching time: tstg = 500ns (typ.) • Small flat package • PC = 1~2 W (Mounted on a ceramic substrate) • Complementary to 2SA1681

文件：73.17 Kbytes 页数：1 Pages

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Power Switching Applications

Features ● Low Collector Saturation Voltage: VCE(sat) = 0.5V(max)(IC = 1A) ● High Speed Switching Time: tstg = 500ns(typ.) ● Small Flat Package ● PC = 1.0 to 2.0W (mounted on a ceramic substrate) ● Complementary to 2SA1681

文件：359.73 Kbytes 页数：3 Pages

KEXIN

科信电子

Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications

文件：119.98 Kbytes 页数：4 Pages

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Silicon NPN Epitaxial Type (PCT Process) Power Amplifier Applications

文件：119.98 Kbytes 页数：4 Pages

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Power Amplifier Applications Power switching applications

文件：150.76 Kbytes 页数：4 Pages

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Power Amplifier Applications Power switching applications

文件：150.76 Kbytes 页数：4 Pages

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NPN Epitaxial Planar Silicon Transistor VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications

ONSEMI

安森美半导体

VHF/UHF Mixer, Local Oscillator, Low-Voltage Amp Applications

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Transistor VHF/UHF Local Oscillator Applications

ONSEMI

安森美半导体