HIGH FREQUENCY AMPLIFIER AND SWITCHING NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● High Gain Bandwidth Product: fT = 200 MHz MIN> ● Complementary to 2SA1608.

文件：238.36 Kbytes 页数：4 Pages

NEC

瑞萨

NPN Silicon Epitaxia

Features ● High gain bandwidth product: fT=200MHz min.

文件：47.57 Kbytes 页数：1 Pages

KEXIN

科信电子

SILICON TRANSISTOR

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR

文件：438.05 Kbytes 页数：6 Pages

RENESAS

瑞萨

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR

FEATURE ● High Speed : tstg = 20 ns MAX.

文件：294.5 Kbytes 页数：4 Pages

NEC

瑞萨

丝印：B33；SILICON TRANSISTOR

HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR FEATURES • High-speed switching • Low collector saturation voltage • High gain bandwidth product • Low collector capacitance • Can be used complementary to the 2SA1610. • Small Package: 3-pin Super Small Package (SC-70)

文件：927.67 Kbytes 页数：7 Pages

RENESAS

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HIGH SPEED SWITCHING NPN SILICON EPITAXIAL TRANSISTOR

FEATURE ● High Speed: ton

文件：270.13 Kbytes 页数：4 Pages

NEC

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AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● Complementary to 2SA1611 ● High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) ● High Voltage: VCEO = 50 V

文件：256.269 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTOR

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

文件：384.53 Kbytes 页数：6 Pages

RENESAS

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SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High DC Current Gain ● Complementary to 2SA1611 ● High Voltage APPLICATIONS ● General Purpose Amplification

文件：825.55 Kbytes 页数：4 Pages

JIANGSU

长电科技

NPN Silicon Epitaxia

Features ● High dc current gain ● High voltage.

文件：47.98 Kbytes 页数：1 Pages

KEXIN

科信电子