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2SC3357-T1	文件：218.19 Kbytes Page：10 Pages	NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD FEATURES •Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz •Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz •LargePtot:Ptot=1.2W(Mountedon16cm2×	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SC3357-T1-A	文件：216.06 Kbytes Page：6 Pages	NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION	CEL California Eastern Labs	CEL

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2SC3357-T1

文件：218.19 Kbytes

Page：10 Pages

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION3-PINPOWERMINIMOLD

FEATURES •Lownoiseandhighgain NF=1.1dBTYP.,Ga=7.5dBTYP.@VCE=10V,IC=7mA,f=1GHz NF=1.8dBTYP.,Ga=9.0dBTYP.@VCE=10V,IC=40mA,f=1GHz •Highpowergain:MAG=10dBTYP.@IC=40mA,f=1GHz •LargePtot:Ptot=1.2W(Mountedon16cm2×

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

RENESAS

2SC3357-T1-A

文件：216.06 Kbytes

Page：6 Pages

NPNEPITAXIALSILICONRFTRANSISTORFORHIGH-FREQUENCYLOW-NOISEAMPLIFICATION

CEL

California Eastern Labs

CEL

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