Silicon NPN Power Transistors

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Silicon NPN Power Transistors

文件：161.84 Kbytes 页数：3 Pages

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SHINDENGEN

NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

FEATURES\n• High gain and high power output at 860 MHz\n  Pout = 52W @ Vcc = 28 V, Pin = 10 W, class AB\n• Push-pull structure allows easy design of wideband amplifier\n• Internal emitter balance resistor\n• Internal impedance matching circuit\n• High reliability due to gold electrodes • High gain and high power output at 860 MHz\n  Pout = 52W @ Vcc = 28 V, Pin = 10 W, class AB\n• Push-pull structure allows easy design of wideband amplifier\n• Internal emitter balance resistor\n• Internal impedance matching circuit\n• High reliability due to gold electrodes;

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Power Transistor - Silicon NPN Triple-Diffused Junction Mesa Type

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