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2SC3230

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system

文件:64.459 Kbytes 页数:3 Pages

ISC

无锡固电

2SC3230

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage : V(BR)CEO= 30V(Min) • Good Linearity of hFE • Complement to Type 2SA1276 APPLICATIONS • Designed for general purpose applications.

文件:126.18 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC3230

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Complement to type 2SA1276 • Good linearity of hFE APPLICATIONS • General purpose applications • Cordless telephone tx final amplifier application for 1.7MHz system

文件:95.04 Kbytes 页数:3 Pages

SAVANTIC

2SC3231

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications

文件:89.63 Kbytes 页数:3 Pages

SAVANTIC

2SC3231

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakddown Voltage : V(BR)CEO= 60V(Min) • Large Current Capability • High Collector PowerDissipation APPLICATIONS • Designedfor B/W TV horizontal deflection output applications

文件:124.42 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC3231

Silicon NPN Power Transistors

DESCRIPTION • With TO-220 package • Wide area of safe operation APPLICATIONS • Switching regulators • General purpose power amplifiers • TV horizontal output applications

文件:56.62 Kbytes 页数:3 Pages

ISC

无锡固电

2SC3233

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:294.13 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3233

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:275.07 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3233-251

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:294.13 Kbytes 页数:2 Pages

ISC

无锡固电

2SC3233-252

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件:275.07 Kbytes 页数:2 Pages

ISC

无锡固电

晶体管资料

  • 型号:

    2SC3236

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    开关管 (S)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    500V

  • 最大电流允许值:

    5A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BUT11(A),BUV46(A),2SC2613,2SC2827,2SC3039,2SC3056A,2SC3170,2SC3497,2SC4129,3DK306C,

  • 最大耗散功率:

    60W

  • 放大倍数:

  • 图片代号:

    B-44

  • vtest:

    500

  • htest:

    999900

  • atest:

    5

  • wtest:

    60

技术参数

  • 功能描述:

    TRANSISTOR

供应商型号品牌批号封装库存备注价格
24+
TO-3
460
询价
TOSHIBA/东芝
22+
TO-220
6000
十年配单,只做原装
询价
TOS
23+
TO
20000
正品原装货价格低
询价
ROHM/罗姆
23+
TO-92S
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
ROHM
TO92
4370
全新原装进口自己库存优势
询价
ROHM
23+
TO92
20000
全新原装假一赔十
询价
ST
23+
CAN to-39
16900
正规渠道,只有原装!
询价
T/NEC
2023+
CAN
50000
全新原装现货
询价
ST
25+
CAN to-39
16900
原装,请咨询
询价
ST
2511
CAN to-39
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
更多2SC323供应商 更新时间2026-3-10 14:31:00