Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High voltage, high speed APPLICATIONS ·For switching regulator and DC/DC converter applications

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SAVANTIC

NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

NPN SILICON EPITAXIAL TRANSISTOR FOR 860 MHZ WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

文件：121.6 Kbytes 页数：3 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR FOR 860-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE

FEATURES • High gain and high power output at 860 MHz Pout = 52 W @ VCC = 28 V, Pin = 10 W, class AB • Push-pull structure allows easy design of wideband amplifier • Internal emitter balance resistor • Internal impedance matching circuit • High reliability due to gold electrodes

文件：175.61 Kbytes 页数：10 Pages

RENESAS

瑞萨

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文件：119.38 Kbytes 页数：3 Pages

SAVANTIC

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JMNIC

锦美电子

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文件：157.76 Kbytes 页数：3 Pages

JMNIC

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文件：118.33 Kbytes 页数：3 Pages

SAVANTIC

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文件：118.7 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

文件：120.53 Kbytes 页数：3 Pages

SAVANTIC

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文件：131.67 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司