2SC2878A

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA)

2SC2878A

0.3A,50VNPNPlasticEncapsulatedTransistor

FEATURES •LowOnResistance •HighEmitter-BaseVoltage •HighReversehFE>30(typ.)VCE=-2V,IC=-4mA.

2SC2878-A

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA)

2SC2878B

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA)

2SC2878-B

ForMutingandSwitchingApplications

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA)