SILICON NPN EPITAXIAL PLANAR TYPE

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) • Specified 28V, 28MHz Characteristics • Output Power : Po = 150WPEP (Min.) • Power Gain : Gp = 12.2dB (Min.) • Collector Efficiency : ηC = 35 (Min.) • Intermodulation Distortion : IMD = −30dB (Max.)

文件：188.36 Kbytes 页数：4 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL PLANAR TYPE

Toshiba

东芝

TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28v SUPPLY VOLTAGE USE)

2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) ● Specified 28V, 28MHz Characteristics ● Output Power : Po = 150WPEP (Min.) ● Power Gain : Gp = 12.2dB (Min.) ● Collector Efficiency : ηC = 35 (Min.) ● Intermodulation Distortion : IMD = −30dB (Max.)

文件：137.7 Kbytes 页数：2 Pages

TOSHIBA

东芝

T0-92

RENESAS/瑞萨

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TO-3P

FUJI

富士通

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