Silicon NPN Power Transistors

·With TO-3PN package ·Complement to type 2SA1062 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier

文件：139.52 Kbytes 页数：3 Pages

SAVANTIC

SILICON EPITAXAL BASE LESA TRANSISTOR

Silicon Epitaxal Base Mesa transistor 2SC2486 --> NPN 2SA1062 -->PNP

文件：89.07 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN Power Transistors

DESCRIPTION · With TO-3PN package · Complement to type 2SA1062 · High collector power dissipation APPLICATIONS · High power audio frequency amplifier VCBO Collector-base voltage Open emitter 120 V VCEO Collector-emitter voltage Open base 120 V VEBO Emitter-base voltage Open collector 5 V

文件：138.55 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1064 APPLICATIONS ·Designed for AF amplifier, high power amplifier applications.

文件：226 Kbytes 页数：2 Pages

ISC

无锡固电

SI NPN EPITAXIAL MESA

2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP

文件：206.46 Kbytes 页数：4 Pages

PANASONIC

松下

SI NPN EPITAXIAL MESA

2SC2488 NPN 2SA1064 PNP 2SC2489 NPN 2SA1066 PNP

文件：206.46 Kbytes 页数：4 Pages

PANASONIC

松下

isc Silicon NPN Power Transistor

DESCRIPTION • Good Linearity of hFE • Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 150V (Min) • Wide Area of Safe Operation • Complement to Type 2SA1065 APPLICATIONS • Designed for AF amplifier,high power amplifier applications.

文件：220.21 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

文件：127.53 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Epitaxial Type (PCT Process)

文件：133.96 Kbytes 页数：5 Pages

TOSHIBA

东芝

COLOR TELEVISION N1PS Chassis

文件：2.69679 Mbytes 页数：54 Pages

TOSHIBA

东芝