Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage • Fast Switching Speed • Complement to Type 2SA1010 APPLICATIONS • Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglators, DC/DC converters, and high frequency power amplif

文件：135.64 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features Low VCE(sat),fast switching speed, complementary pair with 2SA1010. Applications Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency pow

文件：1.23188 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN Power Transistors

DESCRIPTION · With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in ind

文件：149.05 Kbytes 页数：4 Pages

SAVANTIC

Silicon NPN transistor in a TO-220 Plastic Package.

Descriptions Silicon NPN transistor in a TO-220 Plastic Package. Features low collector saturation voltage, fast switching speed, wide base reverse-bias SOA. Applications High-speed high-voltage converters, and high-frequency power amplifiers.

文件：1.4563 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FE

文件：114.42 Kbytes 页数：6 Pages

NEC

瑞萨

SWITCHMODE SERIES NPN POWER TRANSISTORS

文件：135.48 Kbytes 页数：3 Pages

MOSPEC

统懋

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induct

文件：181.1 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0μs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power switching in induc

文件：211.37 Kbytes 页数：4 Pages

JMNIC

锦美电子

SWITCHMODE SERIES NPN POWER TRANSISTORS

SWITCHMODE SERIES NPN POWER TRANSISTORS ... designed for use in high-voltage,high-speed,pow«r switching in inductive circuit, they are particularly suited for 115 and 220 V switcmode applications such as switching regulators.inverters.DC -DC and converter FEATURES: • Collector-Emittor Sustainin

文件：83.6 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220F package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,high-speed ,power

文件：218.6 Kbytes 页数：3 Pages

SAVANTIC