Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High Voltage ·High frequency APPLICATIONS ·For TV chroma output and vertical output applications

文件：128.199 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

Silicon NPN Power Transistors DESCRIPTION ·With TO-126 package ·High Voltage ·High frequency APPLICATIONS ·For TV chroma output and vertical output applications

文件：99.94 Kbytes 页数：3 Pages

SAVANTIC

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications

文件：153.66 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications

文件：182.81 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A, IB= 0.5A • Fast Switching Speed APPLICATIONS • Designed for use in horizontal deflection output for B/W TV applications.

文件：132.85 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon NPN Power Transistors

DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Fast switching time APPLICATIONS ·For use in horizontal deflection output for B/W TV applications

文件：108.57 Kbytes 页数：4 Pages

SAVANTIC

POWER TRANSISTORS(7.5A,100V,40W)

NPN SILICON POWER TRANSISTORS 7.5 AMPERE SILICON POWER TRANSISTORS 100 VOLTS 40 WATTS

文件：106.41 Kbytes 页数：3 Pages

MOSPEC

统懋

Silicon NPN epitaxial planer type(For high-frequency amplification)

■ Features ● Optimum for RF amplification of FM/AM radios. ● High transition frequency fT. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.

文件：58.27 Kbytes 页数：3 Pages

PANASONIC

松下

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES: Output Power : Po-6W(Min.) (f=470MHz, Vcc=12.6V, Pi=1W) 100 Tested for Load Mismatch Stress at A11 Phase Angles with 30:1 VSWR @ Vcc=12.5V, Po-6.5W, f-470MHz

文件：59.78 Kbytes 页数：2 Pages

TOSHIBA

东芝

UHF BAND POWER AMPLIFIER APPLICATIONS.

FEATURES: -Output Power : Po=12W(Min.) (f=470MHZ, Vcc=12.6V, Pi=3W) -100 Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ Vcc=12.6V, P13W, f=470MHz

文件：61.41 Kbytes 页数：2 Pages

TOSHIBA

东芝