2SC2210

2SC2210

文件：73.3 Kbytes 页数：1 Pages

SANYO

三洋

TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)

TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB (typ.) (f = 45 MHz) • Good linearity of hFE.

文件：176.45 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN Silicon Plastic-Encapsulate Transistor

Features • Capable of 300m Watts of Power Dissipation. • Collector-current : ICM=50mA • Collector-base Voltage:V(BR)CBO= 50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 • Lead Free Finish/Rohs

文件：203.09 Kbytes 页数：2 Pages

MCC

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Amplifier Dissipation NPN Silicon

文件：413.68 Kbytes 页数：3 Pages

JIANGSU

长电科技

NPN Plastic Encapsulated Transistor

FEATURES • Amplifier dissipation NPN Silicon

文件：257.19 Kbytes 页数：2 Pages

SECOS

喜可士

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current ICM: 50 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：123.33 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a TO-92 Plastic Package

Description Silicon NPN transistor in a TO-92 Plastic Package. Features High gain, good hFE linearity. Features TV final picture IF amplifier applications.

文件：957.32 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN transistor in a SOT-23 Plastic Package

Description Silicon NPN transistor in a SOT-23 Plastic Package. Features High gain, good hFE linearity. Applications TV final picture IF amplifier applications.

文件：804.18 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

文件：550.89 Kbytes 页数：12 Pages

NEC

瑞萨

NPN SILICON HIGH FREQUENCY TRANSISTOR

DESCRIPTION AND APPLICATIONS The NE219 series of NPN silicon bipolar transistors is designed for small signal amplifier and oscillator applications up 6 GHz. FEATURES ● HIGH fr: 8 GHz ● LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ● HIGH COLLECTOR CURRENT: 80 mA ● HIGH OSCILLATOR POWE

文件：550.89 Kbytes 页数：12 Pages

NEC

瑞萨