RF POWER TRANSISTOR NPN EPITAXAIL PLANAR TYPE

DESCRITION\n2SC2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on VHF band portable or hand-held radio applications.FEATURES\n● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reli ● High power gain: Gpe ≥ 13dB\n   @VCC = 7.2V, PO = 0.2W, f = 175MHz\n● Emitter ballasted construction, gold metallization for high\n   reliability and good performances.\n● TO-92 similar package is combinient for mountingAPPLICATION\n   Driver amplifiers in general in VHF band portable or hand-held;

MITSUBISHI

三菱电机

NPN EPITAXIAL PLANAR TYPE

NJS

MITSUBISHI RF POWER TRANSISTOR

MITSUBISHI

三菱电机

Package：SC-72 成形引线；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 25V 0.05A SPT

ROHM

罗姆