Silicon PNP Epitaxial

Application • Low frequency power amplifier • Complementary pair with 2SD789

文件：30.3 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Plastic-Encapsulated Transistors

FEATURE Power dissipation PCM: 0.9 W (Tamb=25℃) Collector current ICM: -1 A Collector-base voltage V(BR)CBO: -70 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：73.75 Kbytes 页数：1 Pages

TEL

Silicon PNP Power Transistors

DESCRIPTION • With TO-126 package • Low collector saturation voltage • Excellent hFE linearity APPLICATIONS • For audio frequency power amplifier and general purpose applications

文件：139.47 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • High Collector Current -IC= -3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) • Complement to Type 2SD794 APPLICATIONS • Designed for use in audio frequency amplifier.

文件：247.95 Kbytes 页数：2 Pages

ISC

无锡固电

PNP Silicon Power Transistor

PNP Silicon Power Transistor Features • Capable of 10Watts of Power Dissipation. • Collector-current 3.0A • Collector-base Voltage 70V • Operating and storage junction temperature range: -55°C to +150°C • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • M

文件：332.32 Kbytes 页数：2 Pages

MCC

Silicon PNP Power Transistors

DESCRIPTION · • With TO-126 package • Complement to type 2SD794/794A • Excellent hFE linearity APPLICATIONS • For audio frequency power amplifier and general purpose applications

文件：195.27 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • High Collector Current -IC= -3A • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) • Complement to Type 2SD794 APPLICATIONS • Designed for use in audio frequency amplifier.

文件：71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION · • With TO-126 package • Complement to type 2SD794/794A • Excellent hFE linearity APPLICATIONS • For audio frequency power amplifier and general purpose applications

文件：195.27 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar

文件：50.95 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)

For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A ■Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. ● M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit boar

文件：50.95 Kbytes 页数：3 Pages

PANASONIC

松下