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2SB653

isc Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High Power Dissipation- : PC= 60W(Max)@TC=25℃ • Complement to Type 2SD673 APPLICATIONS • Designed for low frequency power amplifier applications.

文件:221.8 Kbytes 页数:2 Pages

ISC

无锡固电

2SB653

Silicon PNP Power Transistors

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) • High Power Dissipation- : PC= 60W(Max)@TC=25℃ • Complement to Type 2SD673 APPLICATIONS • Designed for low frequency power amplifier applications.

文件:128.07 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SB653

Silicon PNP Power Transistors

DESCRIPTION • With TO-3 package • High power dissipation APPLICATIONS • For low frequency power amplifier applications

文件:108.28 Kbytes 页数:3 Pages

SAVANTIC

2SB653A

LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A

SILICON PNP TRIPLE DIFFUSED LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A

文件:38.91 Kbytes 页数:1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

2SB655

isc Silicon PNP Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation-: PC= 100W(Max)@TC=25℃ ·Complement to Type 2SD675 APPLICATIONS ·Designed for low frequency power amplifier applications.

文件:220.07 Kbytes 页数:2 Pages

ISC

无锡固电

2SB655

Silicon PNP Power Transistors

DESCRIPTION · With TO-3 package · Low collector saturation voltage · High power dissipation APPLICATIONS · Power amplifier applications · Recommended for high-power high-fidelity audio frequency amplifier output stage

文件:108.97 Kbytes 页数:3 Pages

SAVANTIC

2SB656

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications

文件:112.02 Kbytes 页数:3 Pages

SAVANTIC

2SB656

isc Silicon PNP Power Transistors

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·High Power Dissipation- : PC= 125W(Max)@TC=25℃ ·Complement to Type 2SD676 APPLICATIONS ·Designed for low frequency power amplifier applications.

文件:226.18 Kbytes 页数:2 Pages

ISC

无锡固电

2SB656

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·For use in power amplifier applications

文件:362.4 Kbytes 页数:3 Pages

JMNIC

锦美电子

2SB653

Silicon PNP Power Transistors

文件:109.86 Kbytes 页数:3 Pages

SAVANTIC

详细参数

  • 型号:

    2SB65

  • 功能描述:

    LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A

供应商型号品牌批号封装库存备注价格
24+
TO-3
10000
询价
HITACHI/日立
23+
TO-3
23650
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
NEC
24+
CAN3
6540
原装现货/欢迎来电咨询
询价
SANYO
16+
TO-126
100000
全新原装现货
询价
MAT
24+
TO-220
5000
只做原装公司现货
询价
MAT
23+
TO-220
50000
全新原装正品现货,支持订货
询价
MAT
TO-220
22+
6000
十年配单,只做原装
询价
MAT
24+
NA/
26
优势代理渠道,原装正品,可全系列订货开增值税票
询价
24+
N/A
54000
一级代理-主营优势-实惠价格-不悔选择
询价
HITACHI
23+
TO-126
9465
正品原装货价格低
询价
更多2SB65供应商 更新时间2025-12-24 10:50:00