丝印：BS；Package：SOT-23；Power Dissipation

● FEATURES Power Dissipation PCM : 0.2 W (Tamb = 25 °C)

文件：2.06137 Mbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

GE PNP ALLOY JUNCTION(UL TYPE)

1. Medium Power Amplifer 2. Complementary Pair with 2SD352

文件：200.49 Kbytes 页数：5 Pages

Panasonic

松下

Silicon Epitaxial Planar Transistor

FEATURES ● High forward current transfer ratio hFE. ● Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. APPLICATIONS SOT-23 ● For general amplification complementary to 2SD601A

文件：211.54 Kbytes 页数：4 Pages

BILIN

银河微电

GE PNP ALLOY JUNCTION(UL TYPE)

1. Medium Power Amplifer 2. Complementary Pair with 2SD352

文件：200.49 Kbytes 页数：5 Pages

Panasonic

松下