LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temper

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LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB183100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction te

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肖特基二极管芯片

2SB183060MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology;\n\nDue to special schottky barrier structure, the chips have very low reverse leakage current(typical IR=0.002mA@ Vr=100V)and maximum 150C operation junction temperature;\n\nLow power losses, high effic

Silan

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肖特基二极管芯片

Silan

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肖特基二极管芯片

Silan

士兰微