首页 >2SB1669(O)ZE1>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscSiliconPNPPowerTransistor DESCRIPTION •HighDCcurrentamplifierrate hFE≥100@VCE=-5V,IC=-0.5A •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •The2SB1669-Zisapowertransistorthatcanbedirectlydriven fromtheoutputofanIC.Thistransistorisidea | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC | ||
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
SILICONPOWERTRANSISTOR PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfrom theoutputofanIC.ThistransistorisidealforOAandFAequipment suchasmotorandsolenoiddrivers. FEATURES HighDCcurrentamplifierrate hFE≥100(VCE=− | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscSiliconNPNPowerTransistor DESCRIPTION •HighDCcurrentamplifierratehFE≥100@VCE=-5V,IC=-0.5A •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •The2SB1669-ZisapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.Thistransi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SB1669isapowertransistorthatcanbedirectlydrivenfromtheoutputofanIC.ThistransistorisidealforOAandFAequipmentsuchasmotorandsolenoiddrivers. FEATURES •HighDCcurrentamplifierratehFE≥100(VCE=−5.0 | NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社 | NEC |
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