首页 >2SB1424-R/S>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:600mW(Tamb=25℃) Collectorcurrent ICM:-3A Collector-basevoltage V(BR)CBO:-20V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
Plastic-EncapsulateTransistors FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150. | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | HOTTECH | ||
SiliconPNPtransistorinaSOT-89PlasticPackage Descriptions SiliconPNPtransistorinaSOT-89PlasticPackage. Features LowVCE(sat),excellentDCcurrentgaincharacteristics. Applications Generalpurposeamplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
LowVCE(sat)Transistor(??0V,??A) Features 1)LowVCE(sat). VCE(sat)=−0.2V(Typ.) (IC/IB=−2A/−0.1A) 2)ExcellentDCcurrentgaincharacteristics. 3)Complementsthe2SD2150/2SC4115S. Structure Epitaxialplanartype PNPsilicontransistor | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
LowVCE(SAT)0.2V(Typ.)(IC/IB=-2A/-0.1mA). FEATURES •LowVCE(SAT)=-0.2V(Typ.)(IC/IB=-2A/-0.1mA). •ExcellentDCcurrentgaincharacterisitics. •Complementarythe2SD2150. | MAKOSEMIMAKO SEMICONDUCTOR CO.,LIMITED 美科半导体美科半导体股份（香港）有限公司 | MAKOSEMI | ||
LowVCE(sat)Transistor FEATURES ●LowVCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). ●ExcellentDCcurrentgaincharacterisitics. ●Complementarythe2SD2150. APPLICATIONS ●Thisdeviceisdesignedasageneralpurposeamplifier andswitching. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | BILIN | ||
SOT-89-3LPlastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150 | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | JIANGSU | ||
SOT-89-3LPlastic-EncapsulatePNPTransistors FEATURES ●ExcellentDCcurrentgain ●Lowcollector-emittersaturationvoltage ●Complementthe2SD2150 | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
LOWVCE(SAT)TRANSISTOR LOWVCE(SAT)TRANSISTOR DESCRIPTION AstheUTCPNPsilicontransistor,the2SB1424istheepitaxialplanartypetransistorwhichhasverylowVCE(SAT)(Collector-emittersaturationvoltage). FEATURES *VerygoodDCcurrentgain *VerylowVCE(SAT)=-0.2V@IC/IB=(-2A)/(-0.1A) | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC | ||
TRANSISTOR(PNP) FEATURES ●ExcellentDCCurrentGain ●LowCollector-emittersaturationvoltage ●Complementthe2SD2150 | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | HTSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|
