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2SB1202T

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-50V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.1A ·Fastswitchingspeed ·Largecurrentcapacity APPLICATIONS ·Poweramplifierapplications ·Driverstageamplifierapplications ·Mediumspeedpoweramplifier

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SB1202T-E

Bipolar Transistor

BipolarTransistor (–)50V,(–)3A,LowVCE(sat)(PNP)NPNSingleTP/TP-FA Features •AdoptionofFBETandMBITprocesses •LargecurrentcapacitanceandwideASO •Lowcollectortoemittersaturationvoltage •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1202/2SD1

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1202T-E

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)3A,LowVCE(sat)(PNP)NPNSingleTP/TP-FA Features •AdoptionofFBETandMBITprocesses •LargecurrentcapacitanceandwideASO •Lowcollectortoemittersaturationvoltage •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1202/2SD1

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1202T-TL-E

Bipolar Transistor

BipolarTransistor (–)50V,(–)3A,LowVCE(sat)(PNP)NPNSingleTP/TP-FA Features •AdoptionofFBETandMBITprocesses •LargecurrentcapacitanceandwideASO •Lowcollectortoemittersaturationvoltage •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1202/2SD1

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1202T-TL-E

Bipolar Transistor (-)50V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA

BipolarTransistor (–)50V,(–)3A,LowVCE(sat)(PNP)NPNSingleTP/TP-FA Features •AdoptionofFBETandMBITprocesses •LargecurrentcapacitanceandwideASO •Lowcollectortoemittersaturationvoltage •Fastswitchingspeed •Smallandslimpackagemakingiteasytomake2SB1202/2SD1

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1202T-E

Bipolar Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1202T-E

High-Current Switching Applications

SANYOSanyo Semicon Device

三洋三洋电机株式会社

2SB1202T-ETP

Marking:B1202;Package:TP;High-Current Switching Applications

SANYOSanyo Semicon Device

三洋三洋电机株式会社

2SB1202T-TL-E

Bipolar Transistor

ONSEMION Semiconductor

安森美半导体安森美半导体公司

2SB1202T-TL-E

High-Current Switching Applications

SANYOSanyo Semicon Device

三洋三洋电机株式会社

详细参数

  • 型号:

    2SB1202T

  • 制造商:

    SANYO Semiconductor Co Ltd

  • 功能描述:

    3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR

供应商型号品牌批号封装库存备注价格
三洋
24+
SOT-252
320
原装现货假一罚十
询价
SANYO
10+
SOT252
5000
原装现货价格有优势量大可以发货
询价
SANYO
24+
2000
询价
SANYO
18+
SOT252
85600
保证进口原装可开17%增值税发票
询价
原装SANYO
23+
T0-252
50000
全新原装正品现货,支持订货
询价
SANYO
22+
TO-252
8000
原装正品支持实单
询价
SANYO
2023+环保现货
TO-251
18000
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
SANYO
23+
2800
正品原装货价格低
询价
SANYO/三洋
25+
I-PAK
880000
明嘉莱只做原装正品现货
询价
SANYO/三洋
24+
NA/
82500
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多2SB1202T供应商 更新时间2025-5-9 8:00:00