Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA

Bipolar Transistor (–)50V, (–)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA Features • Adoption of FBET, MBIT processes • Large current capacitance and wide ASO • Low collector-to-emitter saturation voltage • Fast switching speed • Small and slim package making it easy to make 2SB1201/2SD1801-

文件：388.23 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 2A TP-FA

ONSEMI

安森美半导体

PNP Transistors

文件：1.5914 Mbytes 页数：3 Pages

KEXIN

科信电子

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam

文件：123.84 Kbytes 页数：4 Pages

SANYO

三洋

High-Current Switching Applications

■ Features ● Low collector-to-emitter saturation voltage. ● Fast switching speed. ● Large current capacity and wide ASO. ● Complementary to 2SD1801

文件：47.23 Kbytes 页数：2 Pages

KEXIN

科信电子

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance and wide ASO • Small and slim package making it easy to make 2SB1201/2SD1801-used set smaller • Low collector-to-emitter saturation voltage • Fast switching speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and

文件：252.08 Kbytes 页数：3 Pages

ISC

无锡固电