2SB1197K

LowFrequencyTransistor(-32V,-0.8A)

Features 1)LowVCE(sat).VCE(sat)≤0.5V(IC/IB=-0.5A/-50mAͅ) 2)IC=-0.8A. 3)Complementsthe2SD1781K.

2SB1197K

PNPGeneralPurposeTransistors

PNPGeneralPurposeTransistors P/bLead(Pb)-Free

2SB1197K

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:200mW(Tamb=25℃) CollectorcurrentICM:-800mA Collector-basevoltageV(BR)CBO:-40V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

2SB1197K

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor

2SB1197KPT

PNPSwitchingTransistor

VOLTAGE32VoltsCURRENT0.8Ampere FEATURE *Smallsurfacemountingtype.(SOT-23) *Correctorpeakcurrent(Max.=1000mA). *Suitableforhighpackingdensity. *Lowvoltage(Max.=40V). *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Telepho

2SB1197KQ

LowFrequencyTransistorPNPSilicon

2SB1197KQ

GENERALPURPOSETRANSISTORS

2SB1197KQ

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor

2SB1197KR

GENERALPURPOSETRANSISTORS

2SB1197KR

LowFrequencyTransistor

Features ●LowVCE(sat).VCE(sat)≤-0.5V(IC/IB=-0.5A/-50mA). ●IC=-0.8A. ●PNPsilicontransistor