PNP Transistors

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KEXIN

科信电子

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.5V(max)@Ic/Ib= -2A/-200mA  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：239.95 Kbytes 页数：5 Pages

PANJIT

強茂

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

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WEITRON

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: -800 mA Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

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TEL