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2SA821

Plastic-EncapsulatedTransistors

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.25W(Tamb=25℃) CollectorcurrentICM:-0.03A Collector-basevoltageV(BR)CBO:-210V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

2SA821

TRANSISTOR(PNP)

TRANSISTOR(PNP) FEATURES PowerdissipationPCM:0.25W(Tamb=25℃) CollectorcurrentICM:-0.03A Collector-basevoltageV(BR)CBO:-210V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SA821

TRANSISTOR(PNP)

FEATURES PowerdissipationPCM:0.25W(Tamb=25℃) CollectorcurrentICM:-0.03A Collector-basevoltageV(BR)CBO:-210V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

2SA821

PNPPlasticEncapsulatedTransistor

FEATURES ●HighBreakdownVoltage ●LowTransitionFrequency

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SA821S

TRANSISTOR(PNP)

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

2SA821S

TO-92SPlastic-EncapsulateTransistors

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SA821S

Plastic-EncapsulatedTransistors

Plastic-EncapsulatedTransistors FEATURES Powerdissipation PD:0.25W(Tamb=25℃) Collectorcurrent ICM:-0.03A Collector-basevoltage V(BR)CBO:-210V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

TELTokyo Electron Ltd.

东电电子东京电子有限公司

2SA821S

HIGHVOLTAGEAMPLIFIERTRANSISTOR

High-voltageAmplifierTransistor(−210V,−30mA) Features 1)Highbreakdownvoltage,(VCER=−210V) 2)Complementsthe2SC1651S.

ROHMRohm

罗姆罗姆半导体集团

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