2SA812

SILICONTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR MINIMOLD FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=−6.0V,IC=−1.0mA) •HighVoltage:VCEO=−50V ABSOLUTEMAXIMUMRATINGS(TA=25°C) CollectortoBaseVoltageVCBO−60V CollectortoEmitterVoltageVCEO−50

2SA812

PNPSiliconEpitaxialTransistor

Features ●HighDCCurrentGain:hFE=200TYP.(VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V

2SA812

PNPPlastic-EncapsulateTransistors

2SA812

SiliconEpitaxialPlanarTransistor

FEATURES •Commplementaryto2SC1623. •HighDCcurrentgain:hFE=200typ.(VCE=-6.0V,IC=-1.0mA) •HighVoltage:VCEO=-50V. APPLICATIONS •Audiofrequency,generalpurposeamplifier.

2SA812

SiliconEpitaxialPlanarTransistor

FEATURES ●Commplementaryto2SC1623. ●HighDCcurrentgain:hFE=200typ. (VCE=-6.0V,IC=-1.0mA) ●HighVoltage:VCEO=-50V. APPLICATIONS ●Audiofrequency,generalpurposeamplifier.

2SA812

SiliconEpitaxialPlanarTransistor

2SA812

SiliconPNPtransistorinaSOT-23PlasticPackage

Descriptions SiliconPNPtransistorinaSOT-23PlasticPackage. Features Complementarypairwith2SC1623. Applications Audiofrequencyamplifierapplication.

2SA812

Plastic-EncapsulateTransistors

FEATURES Complementaryto2SC1623 HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) HighVoltage:Vceo=-50V

2SA812

Plastic-EncapsulateTransistors

Features: 1.hFEishigh,hFE=200(TYP)VCE=-6V,IC=-1mA; 2.Highvoltage,VCEO=-50V; Applications: Forgeneralamplification,itiscomplementaryto2SC1623.

2SA812

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES •Complementaryto2SC1623 •HighDCCurrentGain:hFE=200TYP.(VCE=-6V,IC=-1mA) •HighVoltage:Vceo=-50V