TRANSISTOR (POWER AMPLIFIER, SWITCHING APPLICATIONS)

Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage: VCE (sat)= −0.5 V (max) (IC= −0.5 A) • High-speed switching: tstg= 0.2 μs (typ.) • Complementary to 2SC4604.

文件：167.12 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC4606 ■ Features • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier

文件：48.29 Kbytes 页数：3 Pages

PANASONIC

松下

High-Speed Switching Applications

· Fast switching speed. · Low collector saturation voltage. · High gain-bandwidth product. · Small collector capacitance. · Very small-sized package permitting the 2SA1763-applied sets to be made small and slim. · Complementary pair with the 2SC4452.

文件：98.8 Kbytes 页数：4 Pages

SANYO

三洋

High-Speed Switching Applications

High-Speed Switching Applications Features • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacitacne. • Small-sized package permitting the 2SA1764-applied sets to be made small and slim. • Complementary pair with th 2SC4453.

文件：98.78 Kbytes 页数：4 Pages

SANYO

三洋

High-Speed Switching Applications

High-Speed Switching Applications Features • Fast switching speed. • Low collector saturation voltage. • High gain-bandwidth product. • Small collector capacitance. • Complementary pair with the 2SC4454.

文件：96.6 Kbytes 页数：4 Pages

SANYO

三洋

High-hFE, Low-Frequency General-Purpose Amp Applications???

High hFE, Low-Frequency General-Purpose Amplifier Applications Features · Adoption of FBET, MBIT processes. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low collector-to-emitter saturation voltage. · High VEBO.

文件：81.42 Kbytes 页数：3 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon

Features • Adoption of FBET, MBIT processes. • High DC current gain (hFE=500 to 1200). • Large current capacity. • Low collector-to-emitter saturation voltage. • High VEBO.

文件：50.19 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon NPN triple diffusion planer type

For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 ■ Features ● High collector to emitter voltage VCEO. ● High transition frequency fT.

文件：47.5 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1473A ■ Features • High collector-emitter voltage (Base open) VCEO

文件：36.24 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type

■ Features • High collector-emitter voltage (Base open) VCEO

文件：141.26 Kbytes 页数：3 Pages

PANASONIC

松下