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2SA1615

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SA1615

SiliconPNPPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage- :V(BR)CEO=-30V(Min) ·DCCurrentGain- :hFE=200(Min)@IC=-0.5A ·Ultrahigh-speedswitching APPLICATIONS The2SA1615isavailableforthelargecurrentcontrol insmalldimensionduetothelowsaturationandisideal forhighefficiency

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SA1615

SILICONPOWERTRANSISTOR

PNPSILICONEPITAXIALTRANSISTOR FORHIGH-SPEEDSWITCHING DESCRIPTION The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandare idealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrent

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

2SA1615

iscSiliconPNPPowerTransistor

DESCRIPTION •Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A •HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SA1615

PNPSiliconEpitaxialTransistorforHigh-speedSwitching

FEATURES ●Largecurrentcapacity: IC(DC):-10A,IC(pulse):-15A. ●HighhFEandlowcollectorsaturation voltage:hFE=200MIN.(@VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(@IC=-4A,IB=-0.05A)

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

2SA1615

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●LargeCurrentCapacity ●HighhFEandLowCollectorSaturationVoltage

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

2SA1615

PTYPETTANSISTORS

PTYPETTANSISTORS-10A The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmallduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURE ●Largecurrentcapacity: Ic(DC):-10A,Ic(pulse):-15A ●HighhFEand

STANSON

Stanson Technology

2SA1615

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING

PNPSILICONEPITAXIALTRANSISTORFORHIGH-SPEEDSWITCHING The2SA1615and1615-Zareavailableforthelargecurrentcontrolinsmalldimensionduetothelowsaturationandareidealforhigh-efficiencyDC/DCconvertersduetothefastswitchingspeed. FEATURES •Largecurrentcapacity: IC

NECRenesas Electronics America

瑞萨日本瑞萨电子株式会社

2SA1615-Z

iscSiliconPNPPowerTransistor

DESCRIPTION •Largecurrentcapacity:IC(DC)=-10AIC(pulse)=-15A •HighhFEandlowsaturationvoltage: hFE=200min(VCE=-2V,IC=-0.5A) VCE(sat)≤-0.25V(IC=-4A,IB=-0.05A) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APP

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SA1615-Z

SiliconPowerTransistors

Features ●Largecurrentcapacity. ●HighhFEandlowcollectorsaturationvoltage.

KEXINGuangdong Kexin Industrial Co.,Ltd

科信电子广东科信实业有限公司

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