小信号晶体管

ST

意法半导体

Bipolar Transistor High breakdown voltage and large current capacity

Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s

文件：358.8 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

High-Voltage Switching Applications

文件：113.47 Kbytes 页数：5 Pages

SANYO

三洋

High-Voltage Switching Applications

Features ● Adoption of FBET, MBIT Processes ● High Breakdown Voltage and Large Current Capacity ● Fast Switching Time ● Complementary to 2SC3646

文件：509.48 Kbytes 页数：3 Pages

KEXIN

科信电子