2SA1242-Y(Q)

包装：散装 封装/外壳：TO-251-3 短引线，IPak，TO-251AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 20V 5A PW-MOLD

Toshiba Semiconductor and Storage

2SA1242

TRANSISOTOR(STROBEFLASH,MEDIUMPOWERAMPLIFIERAPPLICATIONS)

StrobeFlashApplications MediumPowerAmplifierApplications •ExcellenthFElinearity :hFE(1)=100to320(VCE=−2V,IC=−0.5A) :hFE(2)=70(min)(VCE=−2V,IC=−4A) •Lowcollectorsaturationvoltage :VCE(sat)=−1.0V(max)(IC=−4A,IB=−0.1A) •Highpow

2SA1242

StrobeFlashApplicationsMediumPowerAmplifierApplications

2SA1242

StrobeFlashApplicationsMediumPowerAmplifierApplications

2SA1242

SiliconPNPtransistorinaTO-252PlasticPackage.

Descriptions SiliconPNPtransistorinaTO-252PlasticPackage. Features ExcellenthFElinearity,lowVCE(sat),highPC. Applications Strobeflashapplications,mediumpoweramplifierapplications.

2SA1242

SiliconPNPEpitaxialType

FEATURES ●ExcellenthFElinearity. ●Lowcollectorsaturationvoltage. ●Highpowerdissipation. APPLICATIONS ●StrobeFlashApplications. ●MediumPowerAmplifierApplications.

2SA1242

iscSiliconPNPPowerTransistor

DESCRIPTION •hFE=100-320(IC=-0.5A;VCE=-2V) •hFE=70(Min)(IC=-4A;VCE=-2V) •LowCollector-EmitterSaturationVoltage-:VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) •·HighPowerDissipation-:PC=10W@TC=25℃,PC=10W@Ta=25℃ •MinimumLot-to-Lotvariationsforrobustdeviceperformanceand

2SA1242

TO-251-3LPlastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●StrobeFlashApplicationsMediumPowerAmplifierApplications ●ExcellenthFELinearity :hFE(1)=100to320(VCE=−2V,IC=−0.5A) :hFE(2)=70(min)(VCE=−2V,IC=−4A) ●LowCollectorSaturationVoltage :VCE(sat)=−1.0V(max)(IC=−

2SA1242

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SA1242

SiliconPNPPowerTransistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati

2SA1242

SiliconPNPPowerTransistor

DESCRIPTION ·hFE=100-320(IC=-0.5A;VCE=-2V) ·hFE=70(Min)(IC=-4A;VCE=-2V) ·LowCollector-EmitterSaturationVoltage- :VCE(sat)=-1.0V(Max)(IC=-4A;IB=-0.1A) ··HighPowerDissipation- :PC=10W@TC=25℃,PC=10W@Ta=25℃ APPLICATIONS ·Formediumpoweramplifierandstrobeflashapplicati