2SA1244-YQ

High Current Switching Applications

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=−0.4V(max)(IC=−3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SC3074

2SA1244-Y(Q)

包装：散装 封装/外壳：TO-251-3 短引线，IPak，TO-251AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 5A PW-MOLD

Toshiba Semiconductor and Storage

2SA1244-Y(T6L1,NQ)

包装：卷带（TR） 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PB-F POWER TRANSISTOR; PW-MOLD;

Toshiba Semiconductor and Storage

2SA1244

TRANSISTOR(HIGHCURRENTSWITCHINGAPPLICATIONS)

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=−0.4V(max)(IC=−3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SC3074

2SA1244

HighCurrentSwitchingApplications

2SA1244

HighCurrentSwitchingApplications

HighCurrentSwitchingApplications •Lowcollectorsaturationvoltage:VCE(sat)=−0.4V(max)(IC=−3A) •Highspeedswitchingtime:tstg=1.0μs(typ.) •Complementaryto2SC3074

2SA1244

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SA1244

iscSiliconPNPPowerTransistorisc

DESCRIPTION •WithTO-251(IPAK)packaging •Highspeedswitchingtime •Lowcollectorsaturationvoltage •Complementtotype2SC3074 •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Mediumpowerdissipation