High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

文件：172.98 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：TO-251-3 短引线，IPak，TO-251AA；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 5A PW-MOLD

Toshiba Semiconductor and Storage

Package：TO-252-3，DPak（2 引线 + 接片），SC-63；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PB-F POWER TRANSISTOR; PW-MOLD;

Toshiba Semiconductor and Storage

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High Current Switching Applications

High Current Switching Applications • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) • High speed switching time: tstg = 1.0 μs (typ.) • Complementary to 2SC3074

文件：172.91 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Current Switching Applications

文件：169.34 Kbytes 页数：5 Pages

TOSHIBA

东芝