丝印：DY；Package：SOT-89；High voltage, High transtition frequency

FEATURES High voltage High transition frequency Complementary to 2SC2881

文件：1.6273 Mbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

Voltage Amplifier Applications Power Amplifier Applications • High voltage: VCEO = −120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1 to 2 W (mounted on a ceramic substrate) • Complementary to 2SC2881

文件：155.71 Kbytes 页数：2 Pages

TOSHIBA

东芝

SILICON PNP EPITAXIAL TRANSISTOR

DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES * High voltage: VCEO= -120V * High transition frequency: fT=120MHz(typ.) * Pc=1 to 2 W(mounted on ceramic substrate)

文件：99.78 Kbytes 页数：3 Pages

UTC

友顺

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) Collector current ICM : -800 mA Collector-base voltage V(BR)CBO : -120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：63.49 Kbytes 页数：1 Pages

TEL