首页 >2SA1020-O(C)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
2SA1020PT | CHENMKOCHENMKO ENTERPRISE CO., LTD. 力勤力勤股份有限公司 | CHENMKO | ||
OneWattHighCurrentPNPTransistorVOLTAGEANDCURRENTARENEGATIVEFORPNPTRANSISTORS OneWattHighCurrentPNPTransistor Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
OneWattHighCurrentPNPTransistorVOLTAGEANDCURRENTARENEGATIVEFORPNPTRANSISTORS OneWattHighCurrentPNPTransistor Features •Pb−FreePackagesareAvailable* | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TO-92Plastic-EncapsulateTransistors Features Powermplifierpplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TO-92MODPlastic-EncapsulateTransistors FEATURES PowerAmplifierApplications | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) PowerAmplifierApplications PowerSwitchingApplications •LowCollectorsaturationvoltage:VCE(sat)=−0.5V(max)(IC=−1A) •Highcollectorpowerdissipation:PC=900mW •High-speedswitching:tstg=1.0μs(typ.) •Complementaryto2SC2655 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
PNPSiliconEpitaxialTransistor PNPSiliconEpitaxialTransistor Poweramplifierapplication Powerswitchingapplication | SEMTECH_ELECSEMTECH ELECTRONICS LTD. 先之科半导体先之科半导体科技（东莞）有限公司 | SEMTECH_ELEC | ||
PNPEPITAXIALSILICONTRANSISTOR DESCRIPTION TheUTC2SA1020isdesignedforpoweramplifierandpowerswitchingapplications. FEATURES *Lowcollectorsaturationvoltage:VCE(SAT)=-0.5V(MAX)(IC=-1A) *Highspeedswitchingtime:tSTG=1.0μs(TYP) *ComplementtoUTC2SC2655 | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | UTC |
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