2SA1015

PNPEPITAXIALTYPE(AUDIOFREQUENCYGENERALPURPOSEAMPLIFIER,DRIVERSTAGEAMPLIFIER)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA

2SA1015

PNPSiliconEpitaxialPlanarTransistor

PNPSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintothreegroups,O,Y andG,L,accordingtoitsDCcurrentgain.As complementarytypetheNPNtransistor 2SC1815isrecommended.)

2SA1015

TOSHIBATransistorSiliconPNPEpitaxialType(PCTprocess)

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA

2SA1015

SiliconEpitaxialPlanarTransistor

2SA1015

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) FEATURES ●Powerdissipation

2SA1015

PNPTransistors

Features ●Highvoltageandhighcurrent VCEO:=-50V(min.),IC=-150mA(max.) ●Lowniose:NF=1dB(Typ.)atf=1KHz

2SA1015

SiliconEpitaxialPlanarTransistor

FEATURES ●ComplementaryTo2SC1815. ●ExcellentHFELinearity. ●Highvoltageandhighcurrent. ●Lownoise. ●Collector-EmittervoltageBVCEO=-50V. APPLICATIONS ●Lowfrequency,lownoiseamplifier.

2SA1015

PNPEpitaxialPlanarTransistor

PNPEpitaxialPlanarTransistor

2SA1015

TO-92Plastic-EncapsulateTransistors

TRANSISTOR(PNP) ●Powerdissipation

2SA1015

AudioFrequencyGeneralPurposeAmplifierApplicationsDriverStageAmplifierApplications

AudioFrequencyGeneralPurposeAmplifierApplications DriverStageAmplifierApplications •Highvoltageandhighcurrent:VCEO=−50V(min), IC=−150mA(max) •ExcellenthFElinearity:hFE(2)=80(typ.)atVCE=−6V,IC=−150mA