2SD2012

Marking：2SD2012；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain LowSaturationVoltage HighPowerDissipation

2SD2061

Marking：2SD2061；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowSaturationVoltage ExcellentDCCurrentGainCharacteristice

2SD2137

Marking：2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighForwardCurrentTransferRatiohFEwhichHas SatisfactoryLinearity LowCollectortoEmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

2SD313

Marking：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowCollector-EmitterSaturationVoltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DCCurrentGainhFE=40~320@IC=1A ComplementraytoPNP2SB507

2ST1480

Marking：2ST1480；Package：SOT-32FP；Complementary power transistors

Features ■Verylowcollector-emittersaturationvoltage ■Highcurrentgaincharacteristic ■Fastswitchingspeed ■Fullyinsulatedpackage Applications ■Voltageregulation ■Computerandperipheralequipment ■Audioamplifier ■Relaydriver Description Thedevicesaremanufacture

2ST15300SR1

Marking：2ST15300SR1；Package：SMD.5；Rad-Hard 300 V, 5 A NPN bipolar transistor

Features •100krad •Lineargaincharacteristics •Inductiveloadruggedness Description The2ST15300isapowerbipolartransistorabletooperateundersevere environmentconditionsandradiationexposure.Itoffershighreliabilityperformance andimmunitytothetotalionizingdose(

2ST2480

Marking：2ST2480；Package：SOT-32FP；Complementary power transistors

Features ■Verylowcollector-emittersaturationvoltage ■Highcurrentgaincharacteristic ■Fastswitchingspeed ■Fullyinsulatedpackage Applications ■Voltageregulation ■Computerandperipheralequipment ■Audioamplifier ■Relaydriver Description Thedevicesaremanufacture

2STA1837

Marking：2STA1837；Package：TO-220FP；PNP power bipolar transistor

Description ThisdeviceisaPNPtransistormanufactured usingnew“PB-HDC”(powerbipolarhighdensity current)technology.Theresultingtransistor showsgoodgainlinearitybehavior. Features ■HighbreakdownvoltageVCEO=-230V ■Complementaryto2STC4793 ■Hightransitionfrequenc

2STC4793

Marking：2STC4793；Package：TO-220FP；NPN power bipolar transistor

Description ThisdeviceisaNPNtransistormanufactured usingnew“PB-HDC”(powerbipolarhighdensity current)technology.Theresultingtransistor showsgoodgainlinearitybehavior. Features ■HighbreakdownvoltageVCEO=230V ■Complementaryto2STA1837 ■Hightransitionfrequency

AAT4901IJS-4-T1

Marking：2SRYY；Package：SC70JW-8；Buffered Power Full Bridge

Features •VINRange:2.0V–5.5V •RDS(ON): High-side240mΩ Low-side200mΩ •Break-Before-MakeShoot–ThroughProtection •4Options SingleControlInputwithEnable TwoLogicVersions DualControlInputwithBrakeFunction DualHalf-bridge •LowQuiescentCurrent: 10μA(m