2SCR583D3FRA

Marking：2SCR583D3；Package：TO-252；NPN 7A 50V Power Transistor

Features 1)SuitableforPowerDriver. 2)ComplementaryPNPTypes:2SAR583D3FRA. 3)LowVCE(sat) VCE(sat)=350mV(Max.).(IC/IB=3A/150mA) Application LOWFREQUENCYAMPLIFIER

2SCR586D3

Marking：2SCR586D3；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

Features 1)SuitableforPowerDriver. 2)ComplementaryPNPTypes:2SAR586D3. 3)LowVCE(sat) VCE(sat)=300mV(Max.). (IC/IB=2A/100mA) Application LOWFREQUENCYAMPLIFIER

2SCR587D3

Marking：2SCR587D3；Package：TO-252-2L；TO-252-2L Plastic-Encapsulate Transistors

=1A/100mA) =120mV(Max.). 2)ComplementaryPNPTypes:2SAR587D3. Features 1)SuitableforPowerDriver. 3)LowVCE(sat) VCE(sat) (IC/IB Application LOWFREQUENCYAMPLIFIER

2SD1047

Marking：2SD1047；Package：TO-3P；Power supply

Description ThedeviceisaNPNtransistormanufacturedusingnewBiT-LA(Bipolartransistorforlinearamplifier)technology.Theresultingtransistorshowsgoodgainlinearitybehaviour. Features ■HighbreakdownvoltageVCEO=140V ■Typicalft=20MHz ■Fullycharacterizedat125°C Ap

2SD1138

Marking：2SD1138；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowFrequencyPowerAmplifierColor TVVerticalDeflectionOutput

2SD1762

Marking：2SD1762；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowVCE(sat) Complementsthe2SB1185

2SD2012

Marking：2SD2012；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighDCCurrentGain LowSaturationVoltage HighPowerDissipation

2SD2061

Marking：2SD2061；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowSaturationVoltage ExcellentDCCurrentGainCharacteristice

2SD2137

Marking：2SD2137；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES HighForwardCurrentTransferRatiohFEwhichHas SatisfactoryLinearity LowCollectortoEmitterSaturationVoltageVCE(sat) AllowingSupplywiththeRadialTaping

2SD313

Marking：2SD313；Package：TO-220-3L；TO-220-3L Plastic-Encapsulate Transistors

FEATURES LowCollector-EmitterSaturationVoltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DCCurrentGainhFE=40~320@IC=1A ComplementraytoPNP2SB507