Radiation Hardened N-Channel Power MOSFETs

Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Features • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Har

文件：46.72 Kbytes 页数：5 Pages

Intersil

Radiation Hardened N-Channel Power MOSFETs

Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Features • 9A, 250V, RDS(on) = 0.415Ω • Second Generation Rad Har

文件：46.72 Kbytes 页数：5 Pages

Intersil

Radiation Hardened N-Channel Power MOSFETs

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瑞萨

TO-252

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