2N7288H中文资料INTERSIL数据手册PDF规格书

描述 Description

The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ.

特性 Features

• 9A, 250V, RDS(on) = 0.415Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

    - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

    - Performance Permits Limited Use to 3000KRAD(Si)

• Gamma Dot - Survives 3E9RAD(Si)/sec at 80 BVDSS Typically

    - Survives 2E12 Typically If Current Limited to IDM

• Photo Current - 7.0nA Per-RAD(Si)/sec Typically

• Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2

    - Usable to 1E14 Neutrons/cm2

• Single Event - Typically Survives 1E5ions/cm2 Having an LET ≤ 35MeV/mg/cm2 and a Range ≥ 30µm at 80 BVDSS