2N718中文资料NPN Silicon Low-Power 30V, 0.5A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181. The device packages for the encapsulated device types are as follows: 2N718A TO-18 , 2N1613 and 2N1613L similar to TO-39 and TO-5.

简介

2N718属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的2N718晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。