2N7007中文资料N-Channel Enhancement-Mode Vertical DMOS FET数据手册Microchip规格书

描述 Description

Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

特性 Features

■ Free from secondary breakdown
■ Low power drive requirement
■ Ease of paralleling
■ Low CISS and fast switching speeds
■ Excellent thermal stability
■ Integral Source-Drain diode
■ High input impedance and high gain
■ Complementary N- and P-channel devicesApplications
■ Motor controls
■ Converters
■ Amplifiers
■ Switches
■ Power supply circuits
■ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)